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SSM6P35AFE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM6P35AFE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM6P35AFE 4 5.4. 5.4. 5.4. 5.4. Source-Drain Characteristics Source-Drain Characteristics Source-Drain Characteristics Source-Drain Characteristics (Unless otherwise specified, T (Unless otherwise specified, T (Unless otherwise specified, T (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )(Q1, Q2 Common) )(Q1, Q2 Common) )(Q1, Q2 Common) )(Q1, Q2 Common) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = 100 mA, VGS = 0 V Min Typ. 0.83 Max 1.2 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking 2017-06-22 Rev.2.0 ©2017 Toshiba Corporation |
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