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SSM6P35AFE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM6P35AFE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page  SSM6P35AFE 1 MOSFETs Silicon P-Channel MOS SSM6P35AFE SSM6P35AFE SSM6P35AFE SSM6P35AFE Start of commercial production 2017-07 1. 1. 1. 1. Applications Applications Applications Applications • Analog Switches 2. 2. 2. 2. Features Features Features Features (1) 1.2 V drive (2) ESD(HBM) level 2 kV (3) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit ES6 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 2017-06-22 Rev.2.0 ©2017 Toshiba Corporation |
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