STB16PF06L datasheet(2/10 Pages) STMICROELECTRONICS

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STB16PF06L

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25°C , ID = 8 A , VDD = 30 V

Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse

Table 4: Thermal Data

(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate-source Voltage

± 16

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

11.4

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.4

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

EAS (2)

Single Pulse Avalanche Energy

250

Tstg

Operating Junction Temperature

Storage Temperature

- 55 to 175

°C

Rthj-case

Thermal Resistance Junction-case Max

2.14

°C/W

Rthj-PCB(#)

Thermal Resistance Junction-PCB Max

°C/W

Maximum Lead Temperature For Soldering

Purpose (1.6 mm frrom case, for 10sec)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 100µA

1.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 8 A

VGS = 5V, ID = 8 A

0.11

0.130

0.125

0.165

Ω

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