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STB16PF06L Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB16PF06L
Description  P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB16PF06L Datasheet(HTML) 3 Page - STMicroelectronics

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STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS = 10 V, ID =3 A
7.2
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
630
121
49
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 30 V, ID = 8 A, RG = 4.7Ω
VGS = 4.5 V
(Resistive Load , Figure 1)
129
90
25.5
19.5
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V, ID = 16 A,
VGS = 4.5V
(See test circuit, Figure 2)
11.4
5.2
4.7
15.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
VSD (1)
Forward On Voltage
ISD = 8 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 16 A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see test circuit, Figure 3)
48.5
87.3
3.6
ns
nC
A



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