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STB16PF06L Datasheet(PDF) 3 Page - STMicroelectronics |
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STB16PF06L Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() 3/10 STB16PF06L ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Table 7: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VDS = 10 V, ID =3 A 7.2 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 630 121 49 pF pF pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 30 V, ID = 8 A, RG = 4.7Ω VGS = 4.5 V (Resistive Load , Figure 1) 129 90 25.5 19.5 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V, ID = 16 A, VGS = 4.5V (See test circuit, Figure 2) 11.4 5.2 4.7 15.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see test circuit, Figure 3) 48.5 87.3 3.6 ns nC A |
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