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PMT29EN Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # PMT29EN
Description  N-Channel 30 V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

PMT29EN Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  PMT29EN Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd PMT29EN Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
- 50
- 25
0
25
50
75
100
125
150
175
T
J - Junction Temperature (°C)
I
D = 6 A
V
GS = 4.5 V
V
GS = 10 V
0.00
0.05
0.10
0.15
0.20
0.25
02468
10
V
GS - Gate-to-Source Voltage (V)
T
J = 150 °C
T
J = 25 °C
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD - Source-to-Drain Voltage (V)
T
J = 25 °C
T
J = 150 °C
-1.0
-0.7
-0.4
-0.1
0.2
0.5
- 50
- 25
0
25
50
75
100
125
150
175
T
J -Temperature (°C)
I
D = 250 μA
I
D = 5 mA
30
32
34
36
38
40
- 50
- 25
0
25
50
75
100
125
150
175
T
J - Junction Temperature (°C)
I
D = 1 mA
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
PMT29EN
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