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PMT29EN Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # PMT29EN
Description  N-Channel 30 V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

PMT29EN Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30 V (D-S) MOSFET
FEATURES
•TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
•100 % Rg and UIS Tested
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.019
RDS(on) () at VGS = 4.5 V
0.021
ID (A)
7
Configuration
Single
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
7
A
TC = 125 °C
4.5
Continuous Source Current (Diode Conduction)
IS
5
Pulsed Drain Currenta
IDM
31
Single Pulse Avalanche Current
L = 0.1 mH
IAS
10
Single Pulse Avalanche Energy
EAS
5mJ
Maximum Power Dissipationa
TC = 25 °C
PD
4
W
TC = 125 °C
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mountb
RthJA
110
°C/W
Junction-to-Foot (Drain)
RthJF
38
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
PMT29EN
1


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