MMBT6427 datasheet(2/6 Pages) FS

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ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (Continued)

ON CHARACTERISTICS

––

(I C = 10 mAdc, V CE

)

(I C = 100 mAdc, V CE

)

(I C = 500 mAdc, V CE

)

Collector–Emitter Saturation Voltage

VCE(sat)

)

(

(I C = 50 mAdc, I B

–

)

(I C = 500 mAdc, I B

–

)

Base–Emitter Saturation Voltage

V BE(sat)

––

2.0

Vdc

(I C = 500 mAdc, I B = 0.5 mAdc)

Base–Emitter On Voltage

V BE(on)

—

1.75

Vdc

(I C = 50 mAdc, V CE = 5.0Vdc)

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C obo

––

7.0

Input Capacitance

C ibo

––

(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)

Current Gain–High Frequency

fe |

1.3

—

Vdc

(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)

Noise Finure

—

(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz )

Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0%

R S

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

MMBT6427

2018. 09. 18

2/6

Revision No : 0

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