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2ED21091S06F Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # 2ED21091S06F
Description  650 V half bridge gate driver with integrated bootstrap diode
PDF  26 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

2ED21091S06F Datasheet(HTML) 6 Page - Infineon Technologies AG

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Datasheet
6 of 26
V 2.22
www.infineon.com/soi
2020-07-02
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
4
Electrical parameters
4.1
Absolute maximum ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Table 3
Absolute maximum ratings
Note 1: In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins VCC and VB in case of
activated bootstrap diode.
4.2
Recommended operating conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters
are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with
supplies of (VCC– COM) = (VB– VS) = 15 V.
Table 4
Recommended operating conditions
Note 2: Logic operation for VS of – 11 V to +650 V.
Symbol
Definition
Min.
Max.
Units
VB
High-side floating well supply voltage Note1
VCC – 5
675
V
VS
High-side floating well supply return voltage
VCC – VBS – 5
650
VHO
Floating gate drive output voltage
VS – 0.5
VB+ 0.5
VBS
Floating gate drive voltage supply voltage
-1
25
VCC
Low side supply voltage
-1
25
VLO
Low-side output voltage
- 0.5
VCC+ 0.5
VIN
Logic input voltage
- 5
VCC + 0.5
VDT/SD
Programmable dead time pin voltage
- 0.5
4
dVS/dt
Allowable VS offset supply transient relative to COM
50
V/ns
PD
Package power dissipation @ TA ≤+25ºC 8 - Lead DSO - 8
0.625
W
RthJA
Thermal resistance, junction to ambient 8 - Lead DSO - 8
200
ºC/W
TJ
Junction temperature
150
ºC
TS
Storage temperature
- 55
150
TL
Lead temperature (soldering, 10 seconds)
300
Symbol
Definition
Min
Max
Units
VB
Bootstrap voltage
VS + 10
VS+ 20
V
VBS
High-side floating well supply voltage
10
20
VS
High-side floating well supply offset voltageNote2
VCC – VBS – 1
650
VHO
Floating gate drive output voltage
VS
VB
VCC
Low-side supply voltage
10
20
VLO
Low-side output voltage
COM
VCC
VIN
Logic input voltage
- 4
5
VDT/SD
Programmable dead time pin voltage
-0.5
4
RDT
Programmable dead time resistor
12
150
kΩ
TA
Ambient temperature
- 40
125
ºC



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