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2ED2184S06F Datasheet(PDF) 14 Page - Infineon Technologies AG

Part # 2ED2184S06F
Description  650 V high-side and low-side gate driver with integrated bootstrap diode
PDF  24 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

2ED2184S06F Datasheet(HTML) 14 Page - Infineon Technologies AG

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Datasheet
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V 2.21
www.infineon.com/soi
2020-07-07
2ED2181 (4) S06F (J)
650 V high-side and low-side driver with integrated bootstrap diode
Figure 14
Negative voltage tolerance on inputs of upto –5 V
5.9
Negative voltage transient tolerance of VS pin
A common problem in today’s high-power switching converters is the transient response of the switch node’s
voltage as the power switches transition on and off quickly while carrying a large current. A typical 3-phase
inverter circuit is shown in Figure 15, here we define the power switches and diodes of the inverter.
If the high-side switch (e.g., the IGBT Q1 in Figures 15 and 16) switches from on to off, while the U phase current
is flowing to an inductive load, a current commutation occurs from high-side switch (Q1) to the diode (D2) in
parallel with the low-side switch of the same inverter leg. At the same instance, the voltage node VS1, swings from
the positive DC bus voltage to the negative DC bus voltage.
Figure 15
Three phase inverter
Also when the V phase current flows from the inductive load back to the inverter (see Figures 16 C) and D)), and
Q4 IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, VS2,
swings from the positive DC bus voltage to the negative DC bus voltage.
However, in a real inverter circuit, the VS voltage swing does not stop at the level of the negative DC bus, rather
it swings below the level of the negative DC bus. This undershoot voltage is called “negative VS transient”



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