FPD3000SOT89

Phone: +1 408 850-5790

http:// www.filtronic.co.uk/semis

Revised: 01/05/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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PERFORMANCE (1850 MHz)

♦ 13 dB Small-Signal Gain (SSG)

♦ 1.3 dB Noise Figure

♦ 45 dBm Output IP3

♦ 45% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Available in Lead Free Finish: FPD3000SOT89E

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DESCRIPTION AND APPLICATIONS

The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000

µm Schottky barrier Gate, defined by high-

resolution stepper-based photolithography.

The recessed and offset Gate structure minimizes

parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a

range of bias conditions and input power levels. The FPD3000 is available in die form and in other

packages.

Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-

point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL

Power at 1dB Gain Compression

29.5

30

dBm

Small-Signal Gain

SSG

11.5

13

dB

Power-Added Efficiency

PAE

45

%

Noise Figure

NF

1.3

0.9

dB

Output Third-Order Intercept Point

IP3

Matched for optimal power

Matched for best IP3

42

45

dBm

Saturated Drain-Source Current

750

930

1100

mA

Maximum Drain-Source Current

1.5

A

Transconductance

800

mS

Gate-Source Leakage Current

2

20

µA

Pinch-Off Voltage

0.7

1.0

1.3

V

Gate-Source Breakdown Voltage

12

16

V

Gate-Drain Breakdown Voltage

12

16

V