MJD41C datasheet(3/6 Pages) ONSEMI

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MJD41C (NPN) MJD42C (PNP)

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0.06

IC, COLLECTOR CURRENT (AMP)

0.2

0.4

500

VCE = 2 V

TJ = 150°C

0.3

°C

−55

°C

0.1

0.6

Figure 1. Power Derating

T, TEMPERATURE (

°C)

100

125

150

Figure 2. Switching Time Test Circuit

IC, COLLECTOR CURRENT (AMP)

0.1

0.7

0.5

0.3

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

td @ VBE(off) ≈ 5 V

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.2

0.8

1.6

0.4

VBE(sat) @ IC/IB = 10

2.5

1.5

0.5

300

200

100

0.02

0.06

0.2

0.4

0.1

0.6

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.06

0.2

0.4

0.3

0.1

0.6

0.06

0.2

0.4

0.1

0.6

Figure 4. Turn−On Time

Figure 5. “On” Voltages

Figure 6. Turn−Off Time

TJ = 25°C

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 10

+11 V

−9 V

−4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

MSB5300 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

REVERSE ALL POLARITIES FOR PNP.

TA SURFACE MOUNT

0.07

0.05

TYPICAL CHARACTERISTICS

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