LP4565T1G datasheet(2/3 Pages) LRC

2 / 3 page

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 uA

-1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±10

VDS = -48 V, VGS = 0 V

-1

VDS = -48 V, VGS = 0 V, TJ = 55°C

-10

On-State Drain Current

ID(on)

VDS = -5 V, VGS = -10 V

-7.5

VGS = -10 V, ID = -4 A

VGS = -4.5 V, ID = -3.2 A

100

Forward Transconductance

gfs

VDS = -15 V, ID = -4 A

Diode Forward Voltage

VSD

IS = -2.1 A, VGS = 0 V

-0.83

Total Gate Charge

Gate-Source Charge

Qgs

4.2

Gate-Drain Charge

Qgd

3.1

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

1146

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Notes

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

VDS = -15 V, VGS = 0 V, f = 1 Mhz

mΩ

rDS(on)

VDS = -30 V, RL = 7.5 Ω,

ID = -4 A,

VGEN = -10 V, RGEN = 6 Ω

VDS = -30 V, VGS = -4.5 V,

ID = -4 A

Drain-Source On-Resistance

Zero Gate Voltage Drain Current

Static

6. Electrical Characteristics

IDSS

Dynamic

Leshan Radio Company, LTD.

2/3

LP4565DT1AG

60V P-Channel Enhancement MOSFET

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Rev.A Nov. 2019

LP4565T1G Datasheet(PDF) 2 Page - Leshan Radio Company

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