LP4565T1G datasheet(1/3 Pages) LRC

Part #	LP4565T1G

Description	P-Channel 60-V (D-S) MOSFET Low rDS(on) trench technology

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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1 / 3 page

P-Channel 60-V (D-S) MOSFET

1. Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

2. Typical Applications:

• Load Switches

• DC/DC Conversion

• Motor Drives

Leshan Radio Company, LTD.

1/3

3. ORDERING INFORMATION

Device

Marking

Shipping

LP4565T1G

4000/Tape&Reel

4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)

Note:

1.Surface Mounted on 1” x 1” FR4 Board.

2.Pulse width limited by maximum junction temperature.

5. THERMAL CHARACTERISTICS

Continuous Drain Current(Note 1)

Power Dissipation(Note 1)

TA =25°C

TA =70°C

ID

PD

IS

ºC/W

Unit

Maximum Junction-to-Ambient (Note 1)

t≤10S

Steady State

Parameter

RθJA

Symbol

Max

45

95

-5

IDM

-20

-1.6

-7

A

TA =25°C

TA =70°C

A

W

−55 ~+150

Operating Junction and Storage Temperature Range

Symbol

Limits

Unit

Drain−to−Source Voltage

VDSS

-60

Gate−to−Source Voltage

VGS

±20

2.9

1.8

TJ , TSTG

ºC

Continuous Source Current (Diode Conduction)(Note 1)

Pulsed Drain Current (Note 2)

V

A

Parameter

LP4565T1G

LP4565

SO-8

Rev.A Nov. 2019

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