PJM2301PSA datasheet(2/8 Pages) PJSEMI

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PJM2301PSA

P- Enhancement Mode Field Effect Transistor

Electrical Characteristics

TA=25℃ unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

-V(BR)DSS

VGS = 0 V, ID = - 250 µA

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

±100

VDS = - 20 V, VGS = 0 V

µA

Drain-Source On-State Resistance

Note3

RDS(on)

VGS = - 4.5 V, ID = - 2.8 A

110

mΩ

VGS = - 2.5 V, ID = - 2 A

102

140

Forward Transconductance Note3

gFS

VDS = - 5 V, ID = - 2.8 A

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V,

f = 1 MHz

405

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = -10V, VGS= -4.5V, ID= -2.8A

5.5

VDS = - 10 V, VGS = - 2.5 V,

ID = - 2.8 A

3.3

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.3

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 10 Ω

ID = - 1 A, VGEN = - 4.5 V,

RG = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Continuous Source-Drain Diode Current

-IS

1.3

Pulse Diode Forward Current Note1

-ISM

Body Diode Voltage

-VSD

IS = - 1 A

0.5

1.2

Zero Gate Voltage Drain Current

-IDSS

Gate-Source Threshold Voltage Note3

-VGS(th)

VDS = VGS, ID = - 250 µA

0.4

Static Characteristics

Dynamic characteristics

Source-Drain Diode characteristics

Switching Characteristics

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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Revision:3.0 Mar-2020

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