PJM2301PSA datasheet(3/8 Pages) PJSEMI

Part #	PJM2301PSA

Description	P- Enhancement Mode Field Effect Transistor

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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Output Characteristics

VGS =1.5 V

0.0

0.5

1.0

1.5

2.0

VDS - Drain-to-Source Voltage (V)

VGS =5thru 2.5 V

VGS =1 V

VGS =2 V

Transfer Characteristics

0.00

0.25

0.50

0.75

1.00

0.0

0.3

0.6

0.9

1.2

1.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

0.00

0.05

0.10

0.15

0.20

VGS =4.5 V

VGS =2.5 V

Capacitance

Crss

200

400

600

800

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Gate Charge

Qg - Total Gate Charge (nC)

ID =3

VDS =10 V

VDS =5 V

VDS =15 V

On-Resistance vs. Junction Temperature

0.7

0.9

1.1

1.3

1.5

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS =1.8V

ID =2.8 A

VGS =4.5 V

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PJM2301PSA

P- Enhancement Mode Field Effect Transistor

Typical Characteristics Curves

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Revision:3.0 Mar-2020

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