PJM2309PSC datasheet(3/7 Pages) PJSEMI

Part #	PJM2309PSC

Description	P-Channel Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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3 / 7 page

PJM2309PSC

P-Channel Power MOSFET

3 / 7

Typical Characteristic Curves

Output Characteristics

Gate Charge

1234

VGS =10thru 5 V

VGS =3 V

VGS =4 V

VDS - Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

VDS =45 V

ID =1.25A

VDS =30 V

VDS =15 V

Qg - Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

ID =1.25A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

0.01

1000

TA = 25 °C

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Revision：1.

0 Jun-2019

VGS - Gate-Source Voltage (V)

Transfer Characteristics

0.1

100

Time (s)

Single Pulse Power, Junction-to-Ambient

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