2SC4672SQ datasheet(1/3 Pages) PJSEMI

Part #	2SC4672SQ

Description	NPN Transistor

PDF	3 Pages

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Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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2SC4672SQ

NPN Transistor

www.pingjingsemi.com

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Revison：1.0 July-2018

Features

⚫

Low saturation voltage

⚫

Excellent hFE characteristics

Absolute Maximum Ratings

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

6

V

Collector Current

IC

2

A

Power Dissipation

PD

500

mW

Maximum Junction-to-Ambient

RθJA

250

°C/W

Junction Temperature

TJ

150

°C

Storage Temperature Range

TSTG

-55 to 150

°C

Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 500 mA Current Gain Group

P

Q

R

HFE

82

120

180

40

-

40

180

270

390

40

-

Collector Base Cutoff Current

at VCB = 60 V

ICBO

-

0.1

μA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

0.1

μA

Collector Base Breakdown Voltage

at IC = 50

μA

V(BR)CBO

60

-

V

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

50

-

V

Emitter Base Breakdown Voltage

at IE = 50

μA

V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at IC = 1 A, IB = 50 mA

VCE(sat)

-

0.35

V

Transition Frequency

at VCE = 2 V, IC = 0.5 A, f=100MHz

fT

-

210

-

MHz

Collector Output Capacitance

at VCB = 10 V, IE = 0, f = 1MHz

Cob

-

25

-

pF

SOT-89

1.

Base 2. Collector 3.Emitter

Marking: 4672-P

4672-Q

4672-R

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