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TPC8014 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8014 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPC8014 2004-07-06 4 048 20 0 0.6 1 0.8 0.2 0.4 ID = 11A 5.5 2.5 Common source Ta = 25°C Pulse test 12 16 ID – VDS Drain-source voltage VDS (V) 3.5 4 6 8 10 0 1 2 3 4 5 0 4 8 12 16 20 VGS = 2.6 V 3.0 3.2 3.1 2.7 2.9 2.8 3.3 3.4 ID – VDS Drain-source voltage VDS (V) 3.4 0.4 0.6 0.8 1.0 0 4 6 8 10 2 00.2 VGS = 2.5 V 2.6 2.7 2.8 2.9 3.0 3.1 3.2 10 8 6 4 3. 3.3 ID – VGS Gate-source voltage VGS (V) 0 20 0 0.5 1 1.5 4 4 8 12 16 Common source VDS = 10 V Pulse test 23 25 100 Ta = −55°C 2.5 2.5 VDS – VGS Gate-source voltage VGS (V) |Yfs| – ID Drain current ID (A) RDS (ON) – ID Drain current ID (A) 1 3 30 100 Common source Ta = 25°C Pulse test 1 10 100 VGS = 10 V VGE = 4.5 V 3 30 10 0.1 1 10 100 Common source VDS = 10 V Pulse test Tc = 100°C −55°C 25°C |
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