TPC8014

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8014

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

11

Drain current

Pulse (Note 1)

44

A

Drain power dissipation

(t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

157

mJ

Avalanche current

11

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.19

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.08 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4