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F85P03 Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Part # F85P03
Description  85A 100V P-channel Enhancement Mode Power MOSFET
PDF  10 Pages
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Manufacturer  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Direct Link  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

F85P03 Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 10
I85P03
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Units
min
typ
max
Off Characteristics
Drain-source Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
-30
--
--
V
Drain-to-Source Leakage
Current
IDSS
VDS=-30V,VGS=0V,TC=25℃
--
--
-1
μA
VDS=-24V,VGS=0V,TC=125℃
--
--
-100
μA
Gate-to-Source
Forward
Leakage
IGSSF
VGS=+20V
--
--
100
nA
Gate-to-Source
Reverse
Leakage
IGSSR
VGS=-20V
--
--
-100
nA
On Characteristics
(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
--
-3
V
Drain-source on Resistan
ce
RDS(on)
VGS=-10V,ID=-30A
--
5.3
9
mΩ
VGS=-6V,ID=-30A
8.5
13
Dynamic Characteristics
(Note 4)
Forward Transfer conduc
tance
gfs
VDS=-15V,ID=-6A
--
19
--
S
Input Capacitance
Ciss
VGS=0V,VDS=-15V,f=1.0MHz
--
4300
--
pF
Output Capacitance
Coss
--
1000
--
Reverse Transfer Capacit
ance
Crss
--
750
--
Switching Characteristics
(note4)
Turn-on Delay Time
td(on)
ID=-1A,
VDD=-15V,
VGS=-10V,
RG=3Ω
--
20
--
nS
Turn-on Rise Time
tr
--
30
--
Turn-off Delay Time
td(off)
--
50
--
Turn-off Fall Time
tf
--
35
--
Total Gate Charge
Qg
ID=-15A,VDD=-15V,VGS=-10V
--
95
--
nC
Gate-to-Source Charge
Qgs
--
20
--
Gate-to-Drain(“Miller”)C
harge
Qgd
--
30
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(N
ote 3)
VFSD
VGS=0V,IS=-30A
--
--
-1.2
V
Diode Forward Current
(N
ote 2)
IS
--
--
-85
A
Reverse Recovery Time
trr
TJ=25℃,IF=-15A,
dIF/dt=100A/μS,VGS=0V
--
40
--
nS
Reverse Recovery
Charge
Qrr
--
30
--
nC
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=0.5mH,ID=-27A,VDD=-24V,VGATE=-30V,Start TJ=25℃.



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