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AS7C32098A Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS7C32098A
Description  3.3 V 128K x 16 CMOS SRAM
PDF  10 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C32098A Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS7C32098A
2/24/05,v. 1.0
Alliance Semiconductor
P. 7 of 10
Write waveform 3 9
AC test conditions
Notes
1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
For test conditions, see AC Test Conditions, Figures A and B.
3tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500mV from steady-state voltage.
4
This parameter is guaranteed, but not tested.
5WE is High for read cycle.
6CE and OE are Low for read cycle.
7
Address valid prior to or coincident with CE transition Low.
8
All read cycle timings are referenced from the last valid address to the first transitioning address.
9
All write cycle timings are referenced from the last valid address to the first transitioning address.
10 C=30pF, except on High Z and Low Z parameters, where C=5pF.
Address
CE
LB, UB
WE
DataIN
tWC
tCW
tBW
tWP
tDW
tDH
tWZ
tAH
DataOUT
Data undefined
High Z
High Z
tAS
tAW
Data valid
tWR
- Output load: see Figure B.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
+3.0V
2 ns
Figure A: Input pulse
350
Ω
C10
320
Ω
DOUT
GND
+3.3V
Figure B: 3.3V Output load
168
Ω
DOUT
+1.728V
Thevenin equivalent:



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