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WST4045 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST4045 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 6 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA - 40 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=- 3A --- 73 85 RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=- 1A --- 98 126 m Ω VGS(th) Gate Threshold Voltage - 1.0 -1.5 - 3.0 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA --- 4.56 --- mV/℃ VDS=- 28V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=- 28V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=- 3A --- 10 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.8 --- Ω Qg Total Gate Charge (-4.5V) --- 14 --- Qgs Gate-Source Charge --- 2.9 --- Qgd Gate-Drain Charge VDS=- 20V , VGS=-10V , ID=-3.1A --- 3.8 --- nC Td(on) Turn-On Delay Time --- 9 --- Tr Rise Time --- 8 --- Td(off) Turn-Off Delay Time --- 28 --- Tf Fall Time VDD=- 20V , VGS=-10V , RG= 3Ω, RL=2Ω --- 10 --- ns Ciss Input Capacitance --- 650 --- Coss Output Capacitance --- 90 --- Crss Reverse Transfer Capacitance VDS=- 20V , VGS=0V , f=1MHz --- 70 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- -4.3 A VG=VD=0V , Force Current --- --- VSD Diode Forward Voltage 2 VGS=0V , IS=- 2.5A --- --- -1.2 V Note : Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WST4045 P-Ch MOSFET Page 2 www.winsok.tw Dec.2014 1. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production |
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