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WST6045 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST6045
Description  N-Ch MOSFET
PDF  7 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST6045 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.028
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
10V , ID=4.0A
---
40
50
m
Ω
---
45
65
VGS=
4.5V , ID=3.0A
---
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
2.0
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-3.21
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=
48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±
20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=5A
---
12
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
4
---
Ω
Qg
Total Gate Charge (4.5V)
VDS=1
5V , VGS=10V , ID=3.5A
---
11.5
---
nC
Qgs
Gate-Source Charge
---
2.3
---
Qgd
Gate-Drain Charge
---
2.2
---
Td(on)
Turn-On Delay Time
VDD=1
5V , VGEN=10V , RG=3Ω
ID=
1.0A ,RL=4.2Ω.
---
10
---
ns
Tr
Rise Time
---
6
---
Td(off)
Turn-Off Delay Time
---
21
---
Tf
Fall Time
---
5
---
Ciss
Input Capacitance
VDS=1
5V , VGS=0V , f=1MHz
---
540
---
pF
Coss
Output Capacitance
---
56
---
Crss
Reverse Transfer Capacitance
---
26
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
3.0
A
ISM
Pulsed Source Current
2,4
---
---
15
A
VSD
Diode Forward Voltage
2
VGS=0V , ISD=3.5A , TJ=25℃
---
---
1.3
V
trr
Reverse Recovery Time
IF=3.5A,dI/dt=100A/µs , TJ=25℃
---
20
---
nS
Qrr
Reverse Recovery Charge
---
20
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST6045
Page 2
www.winsok.tw
Dec.2014
N-Ch MOSFET



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