IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: 408-982-0700, Fax: 408-496-0670

IXSH 40N60

IXSM 40N60

IXSH 40N60A

IXSM 40N60A

TO-247 AD Outline

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

16

23

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

I

C(on)

V

200

A

C

ies

4500

pF

C

oes

V

350

pF

C

res

90

pF

Q

g

190

260

nC

Q

ge

I

45

60

nC

Q

gc

88

120

nC

t

d(on)

55

ns

t

ri

170

ns

t

d(off)

400

ns

t

fi

40N60

400

ns

40N60A

200

ns

E

off

40N60

5.0

mJ

40N60A

2.5

mJ

t

d(on)

55

ns

t

ri

170

ns

E

on

1.7

mJ

t

d(off)

40N60

1000

ns

40N60A

340

525

ns

t

fi

40N60

600

1500

ns

40N60A

340

700

ns

E

off

40N60

12

mJ

40N60A

6

mJ

R

thJC

0.42 K/W

R

thCK

0.25

K/W

TO-204AE Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

1 = Gate

2 = Emitter

Case = Collector

Inductive load, T

°°°°C

I

V

Switching times may

increase for V

> 0.8 • V

increased R

G

Inductive load, T

125

°°°°°C

I

L = 100

µH

V

R

Remarks: Switching times

may increase for

V

higher T

IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:

4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025