STP135N10 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP135N10

Description	N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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TARGET DATA

July 2003

This is preliminary information on a new product forseen to be developped. Details are subject to change without notice

STB135N10

STP135N10

N-CHANNEL 100V - 0.007

Ω - 135A D²PAK/TO-220

LOW GATE CHARGE STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.007Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET is the result of STMicroelectronics’s well

established and consolidated STripFET technology utiliz-

ing the most recent layout optimization. The device exhib-

its extremely low on-resistance, gate charge and diode’s

reverse recovery charge Qrr making it the ideal switch in

a very large spectrum of applications such as Automotive,

Consumer, Telecom and Industrial.

APPLICATIONS

s

PRIMARY SWITCH IN TELECOM DC-DC

CONVERTER

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

42V AUTOMOTIVE APPLICATIONS

s

SYNCHRONOUS RECTIFICATION

s

DIESEL INJECTION

s

PWM UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STB135N10

STP135N10

100 V

<0.009

Ω

<0.009

Ω

135 A(*)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(1) Pulse width limited by safe operating area.

(*) Value limited by wire bonding

(2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, Tj ≤ TJMAX.

(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID(*)

Drain Current (continuous) at TC = 25°C

135

A

ID

Drain Current (continuous) at TC = 100°C

96

A

IDM(1)

Drain Current (pulsed)

540

A

Ptot

Total Dissipation at TC = 25°C

150

W

Derating Factor

1

W/°C

dv/dt (2)

Peak Diode Recovery voltage slope

TBD

V/ns

EAS (3)

Single Pulse Avalanche Energy

TBD

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

1

2

3

TO-220

1

3

D2PAK

TO-263

(Suffix “T4”)

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