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PM606BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PM606BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS 15 3.7 ±20 A °C -55 to 150 VGS 5 LIMITS ID IDM TYPICAL 0.5 0.8 ID 30V RqJA 146 Junction-to-Ambient 2 Continuous Drain Current TA = 25 °C SYMBOL Pulsed Drain Current 1 RDS(ON) TA = 70 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 20mΩ @V GS = 10V 5A PD TJ, TSTG MAXIMUM THERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL TA = 25 °C TA = 70 °C Power Dissipation W Drain-Source Voltage VDS 30 V REV 1.0 1 2014/9/10 |
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