PM606BA datasheet(2/5 Pages) UNIKC

2 / 5 page

PM606BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.75

2.3

±100

329

7.8

1.2

2.3

0.7

1.1

2.6

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 5A, dlF/dt = 100 A/ms

Gate Threshold Voltage

DYNAMIC

VDS = 0V, VGS = ±20V

Drain-Source Breakdown Voltage

VGS =4.5V, ID = 5A

VDS = 20V, VGS = 0V , TJ = 55 °C

VDS = VGS, ID = 250mA

Drain-Source On-State

Resistance

Ciss

Coss

TEST CONDITIONS

Crss

RDS(ON)

VGS = 10V, ID = 5A

IGSS

IDSS

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage

VDS = 24V, VGS = 0V

VDS = 5V, ID = 5A

STATIC

LIMITS

UNITS

PARAMETER

SYMBOL

Total Gate Charge

VDS = 15V, VGS = 10V,

ID = 5A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

mΩ

Gate-Source Charge

gfs

VGS = 0V, VDS = 15V, f = 1MHz

td(off)

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

VDS = 15V

ID @ 5A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )

Fall Time

Qgs

Qgd

td(on)

IF = 5A, VGS = 0V

Continuous Current

Forward Voltage

VSD

REV 1.0

2014/9/10

PM606BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PM606BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Html Pages

1 2 3 4 5

Datasheet Download

Link URL