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LL024N Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # LL024N
Description  N-Channel 60-V (D-S) MOSFET
PDF  6 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

LL024N Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
•
TrenchFET® Power MOSFETs
•
175 °C Maximum Junction Temperature
•
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
60
0.029 at VGS = 10 V
7.0
0.033 at VGS = 4.5 V
5.6
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
a
TA = 25 °C
ID
7.0
6.0
A
TA = 70 °C
6.1
5.0
Pulsed Drain Current
IDM
40
Avalanche Current
IAS
15
Single Pulse Avalanche Energy
EAS
11
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
3.3
1.7
W
TA = 70 °C
2.3
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t
≤ 10 s
RthJA
36
45
°C/W
Steady State
75
90
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
20
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
N-Channel
0-V (D-S) MOSFET
6
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
LL024N
1


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