FTK2210DFN22 datasheet(3/11 Pages) FS

3 / 11 page

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250µA

IDSS

Zero Gate Voltage Drain Current

VDS=10V, VGS=0V

µA

TJ=85℃

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

0.4

0.6

IGSS

Gate Leakage Current

VGS=±8V, VDS=0V

±10

µA

RDS(ON) e Drain-Source On-state Resistance

VGS=4.5V, IDS=12A

3.6

4.3

mΩ

VGS=2.5V, IDS=10A

4.3

5.6

Diode Characteristics

VSD e

Diode Forward Voltage

ISD=1A, VGS=0V

0.66

1.1

trr

Reverse Recovery Time

ISD=4A

Induct I=0.1mH

VDD=10V,

44.5

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

3.5

4.7

Ciss

Input Capacitance

VGS=0V,

VDS=6V,

Frequency=1.0MHz

2770 3601

Coss

Output Capacitance

570

741

Crss

Reverse Transfer Capacitance

500

650

td(ON)

Turn-on Delay Time

VDD=6V, RL=6Ω,

IDS=1A, VGEN=4.5V,

RG=1Ω

Turn-on Rise Time

23.5

td(OFF) Turn-off Delay Time

Turn-off Fall Time

110

Gate Charge Characteristics

Total Gate Charge

Vds=6V, Vgs=4.5V,

Ids=4A

31.8

41.3

Qgs

Gate-Source Charge

2.9

Qgd

Gate-Drain Charge

7.8

Note e Pulse test ; pulse width≤300µs, duty cycle≤2%.

Electrical Characteristics (TA = 25℃ Unless Otherwise Noted)

2018. 10. 19

3/11

Revision No : 0

FTK2210DFN22

FTK2210DFN22 Datasheet(PDF) 3 Page - First Silicon Co., Ltd

FTK2210DFN22 Datasheet(HTML) 3 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL