STD15N60DM6 datasheet(1/17 Pages) STMICROELECTRONICS

Part #	STD15N60DM6

Description	N-channel 600 V, 286 mΩ typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package

PDF	17 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 17 page

1

3

TAB

2

DPAK

D(2, TAB)

G(1)

S(3)

AM01475V1

Features

Order code

VDS

RDS(on) max.

ID

STD15N60DM6

600 V

338 mΩ

12 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status

STD15N60DM6

Product summary

Order code

STD15N60DM6

Marking

15N60DM6

Package

DPAK

Packing

Tape and reel

N-channel 600 V, 286 mΩ typ., 12 A MDmesh DM6 Power MOSFET

in a DPAK package

STD15N60DM6

Datasheet

DS13337 - Rev 1 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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STD15N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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