STD15N60DM6 datasheet(3/17 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V, TC = 125 °C (1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 6 A

286

338

mΩ

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 100 V, f = 1 MHz, VGS = 0 V

607

Coss

Output capacitance

Crss

Reverse transfer capacitance

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

100

Intrinsic gate resistance

f = 1 MHz open drain

5.7

Total gate charge

VDD = 480 V, ID = 12 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

15.3

Qgs

Gate-source charge

4.1

Qgd

Gate-drain charge

7.7

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for resistive

load switching times and

Figure 18. Switching time waveform)

8.8

Rise time

7.4

td(off)

Turn-off delay time

29.2

Fall time

7.2

STD15N60DM6

Electrical characteristics

DS13337 - Rev 1

page 3/17

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