INA821 datasheet(7/45 Pages) TI

7 / 45 page

6.6 Electrical Characteristics: G = 2 (continued)

at TA = 25°C, VS = ±2.25 V to ±18 V, VCM = VOUT = VS / 2, RL = 10 kΩ connected to ground, and REF pin connected to

ground (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

FREQUENCY RESPONSE

Small-signal –3 dB-

bandwidth

0.8

MHz

Slew rate

V/µs

Settling time

To 0.1% of final value, VO = 10-V step

1.0

µs

To 0.01% of final value, VO = 10-V step

1.7

THD+N

Total harmonic

distortion + noise

f = 1 kHz, VO = 2.8 VRMS

0.00066

Noise floor, RTO

80-kHz bandwidth, VO = 3.5 VRMS

–110

tDR

Overload recovery

time

200

POWER SUPPLY

Quiescent current

IO = 0 mA

1.1

1.2

TA = –40°C to

+125°C

1.5

(1)

Includes effects of input bias and offset currents of amplifier.

(2)

Resistors are ratio matched but have ±20% absolute value.

(3)

Specified by wafer test to 95% confidence level.

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INA592

SBOS914E – OCTOBER 2018 – REVISED FEBRUARY 2021

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