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BAT60B Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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BAT60B Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  SOD-323 Plastic-Encapsulate Diodes FEATURES High Current Rectifier Schottky Diode with Low VF Drop Low Voltage, Low Inductance For Power Supply For Detection and Step-up-Conversion MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 10 V IF Forward Current 3 IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 5 A PD Power Dissipation 350 mW RθJA Thermal Resistance from Junction to Ambient 286 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=1mA 10 V VR=5V 15 μA Reverse current IR VR=8V 25 μA IF=100mA 0.38 IF=500mA 0.5 Forward voltage VF IF=1000mA 0.6 V Total capacitance Ctot VR=5V,f=1MHz 30 pF SOD-323 Schottky BARRIER DIODE BAT60B Rev : www.leiditech.com 01.06.2017 1/3 |
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