2N7002K datasheet(2/4 Pages) LEIDITECH

2 / 4 page

MOSFET ELECTRICAL CHARACTERISTICS

T =25

℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

VDS

VGS = 0V, ID =250µA

Gate Threshold Voltage*

VGS(th)

VDS =VGS, ID =1mA

2.5

1.3

Zero Gate Voltage Drain Current

IDSS

VDS =48V,VGS = 0V

µA

IGSS1

VGS =±20V, VDS = 0V

±10

µA

IGSS2

VGS =±10V, VDS = 0V

±200

Gate –Source leakage current

IGSS3

VGS =±5V, VDS = 0V

±100

VGS = 4.5V, ID =200mA

Ω

Drain-Source On-Resistance*

RDS(on)

VGS =10V,ID =500mA

Ω

Diode Forward Voltage

VSD

VGS=0V, IS=100mA

1.2

Recovered charge

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µS

Dynamic Characteristics**

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS =10V,VGS =0V,f =1MHz

Switching Characteristics**

Turn-On Delay Time

td(on)

Turn-Off Delay Time

td(off)

VGS=10V,VDD=50V,RG=50Ω,

RGS=50Ω, RL=250Ω

Reverse recovery Time

trr

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µS

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BVGSO

Igs=±1mA (Open Drain)

±21.5

±30

Notes :

*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

2N7002K

Rev :

www.leiditech.com

01.06.2018

2/4

2N7002K Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

2N7002K Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4

Datasheet Download

Link URL