2N7002K datasheet(1/4 Pages) LEIDITECH

Part #	2N7002K

Description	N-Channel Enhancement Mode Power MOSFET

PDF	4 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 4 page

SOT-23

FEATURE

z

High density cell design for Low RDS（on）

z

Voltage controlled small signal switch

1. GATE

2. SOURCE

z

Rugged and reliable

3. DRAIN

High saturation current capability

M

Equivalent circuit

MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source voltage

60

V

ID

Drain Current

300

mA

PD

Power Dissipation

0.35

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55

~+150

℃

RθJA

Thermal Resistance fromJunction to Ambient

357

℃ /W

z

ESD protected

VGS

Gate-Source voltage

±20

V

V(BR)DSS

RDS(on)MAX

ID

60 V

3Ω@10V

300mA

4 Ω@4.5V

APPLICATION

Load Switch for Portable Devices

DC/DC Converter

1

2

3

K72

2N7002K

Enhancement Mode Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/4

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2N7002K Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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