LM4318P datasheet(2/5 Pages) LEIDITECH

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6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Characteristic

Drain-Source Breakdown Voltage

(VGS =0V, ID =-250μA )

Gate Threshold Voltage

(VDS =VGS , ID =-250μA )

Gate Leakage Current

(VDS =0V, VGS =±20V )

Zero Gate Voltage Drain Current

(VDS =-24V, VGS =0V )

On-State Drain Current(Note 3)

(VDS = -5 V, VGS = -10 V)

Drain-Source On-Resistance

(VGS =-10V, ID = -7.3A )

Drain-Source On-Resistance

(VGS =-4.5V, ID = -5.9A )

Diode Forward Voltage(Note 3)

(IS =-1A, VGS =0V)

Forward Transconductance(Note 3)

(VDS = -15 V, ID = -7.3 A)

ID(on)

-14

mΩ

td(off)

Note: 3. Pulse test; pulse width≤ 300us, duty cycle≤ 2%.

4. Guaranteed by design, not subject to production testing.

1539

±100

-1

8.4

-1.5

Coss

td(on)

4.7

163

151

gfs

-30

-1

Qgd

Ciss

(VDS = -15 V, RL

=2.1 Ω,ID = -7.3

A,VGEN = -10

V,RGEN = 6 Ω)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Typ.

Max.

V(BR)DSS

IGSS

VSD

Crss

Static

DYNAMIC(Note 4)

Unit

µA

VGS(th)

-3

Symbol

Min.

Qgs

RDS(ON)

(Note 3)

IDSS

(VDS = -15 V,

VGS = -4.5 V,

ID = -7.3 A)

(VDS = -15 V,

VGS = 0 V, f = 1

MHz)

ＬＭ４３１８Ｐ

Rev :

www.leiditech.com

01.06.2018

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