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LMXD0210 Datasheet(PDF) 5 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMXD0210 Datasheet(HTML) 5 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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5 / 8 page ![]() (4) Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -4 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — -30 A VSD Diode Forward Voltage — -0.76 -1.0 V IS=1A, VGS=0V trr Reverse Recovery Time — 8.7 — ns TJ = 25°C, IF =-4A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 2.3 — nC Notes: 1 Calculated continuous current based on maximum allowable junction temperature. 2 Repetitive rating; pulse width limited by max. junction temperature. 3 The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. 4 The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C (5) Test circuits and Waveforms LMXD0210 Rev 2.0 : www.leiditech.com 12.01.2019 5/8 |
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