LMXD0210 datasheet(1/8 Pages) LEIDITECH

Part #	LMXD0210

Description	N and P-Channel MOSFETS

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1 / 8 page

Product Summary

BVDSS

RDS(ON)

ID

20V

22m

6.5A

-20V

37m

-4A

Description

These N+P Dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This

advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

suited for high efficiency fast switching applications.

Mechanical Data



Case: DFN 3.3×3.3-8L



Circuit Configuration: See diagram below

Applications



Notebook



Networking



Load Switch



Hand-held Instruments

Features



Fast switching



Green Device Available



Suit for 1.8V Gate Drive Applications



High Power and current handing capability

Rev 2.0 :

www.leiditech.com

12.01.2019

1/8

LMXD0210

N and P-Channel MOSFETS

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LMXD0210 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LMXD0210 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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