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FTK2N60P Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK2N60P Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 7 page ![]() 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3 .8 Ω@V GS = 10V * Ultra Low gate charge (typical 1.5nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fa st sw itching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3 Source 2 Drain TO - 220 1 TO - 252 TO - 251 1 1 1 TO - 220F ORDERING INFORMATION Ordering Number Pin Assignment Package 1 2 3 Packing FTK2N60P TO-220 G D S Tube FTK2N60F TO-220F G D S Tube FTK2N60I TO-251 G D S Tube FTK2N60D TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source 2011. 08. 25 1/7 SEMICONDUCTOR TECHNICAL DATA FTK2N60P / F / D / I Revision No : A I : D : P : F : |
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