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2SC5820 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC5820
Description  Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
PDF  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5820 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SC5820
Rev.2.00 Aug 10, 2005 page 4 of 10
12
5
10
20
50
100
0
10
20
30
Collector Current
IC (mA)
Gain Bandwidth Product vs.
Collector Current
f= 2 GHz
VCE = 2 V
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.2
0.4
0.6
0.8
1.0
01
2
3
4
5
0
IE = 0
f = 1 MHz
10
12
20
0
120
Collector Current
IC (mA)
S21 Parameter vs. Collector Current
25
50
16
8
4
VCE = 2 V
f = 2 GHz
-40
-20
20
3rd. Order Intercept Point (IP3)
Input Power PIN (dBm)
-60
0
-80
-40
-20
0
20
Collector Current
IC (mA)
Noise Figure vs. Collector Current
Collector Current
IC (mA)
Power Gain vs. Collector Current
100
3rd. Harmonic
f = 1.8 GHz
VCE = 2 V
Ic = 5 mA
Fundamental
-60
110
100
1
2
3
4
5
0
25
20
50
f = 1.8 GHz
VCE = 2 V
VCE = 3 V
VCE = 1 V
12
5
10
20
50
100
0
4
8
12
16
20
f = 1.8 GHz
VCE = 3 V
VCE = 2 V
VCE = 1 V



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