CBS10S40

1

Schottky Barrier Diode Silicon Epitaxial

CBS10S40

CBS10S40

CBS10S40

CBS10S40

Start of commercial production

2013-10

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

High-Speed Switching

2.

2.

2.

2. Features

Features

Features

Features

(1)

(2)

Thin and compact packaging: Height = 0.40mm(max)

3.

3.

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

CST2B

1: Cathode

2: Anode

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25





))))

Characteristics

Peak reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Symbol

Note



(Note 1)

(Note 2)





Rating

40

1.0

3

125

-55 to 125

Unit

V

A



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

Note 2: Measured with a 10 ms pulse.

2018-11-16

Rev.3.0

©2018

Toshiba Electronic Devices & Storage Corporation