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STL260N4LF7 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL260N4LF7 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Capacitance variations GADG110620191139CVR 104 103 102 101 10-1 100 101 C (pF) VDS (V) CISS COSS CRSS Figure 8. Normalized on-resistance vs temperature -75 -25 25 75 125 175 T j (ºC) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 R DS(on) (norm.) VGS = 10 V ID = 25 A GIPD2005160L48LRON Figure 9. Normalized V(BR)DSS vs temperature GADG110620191141BDV 1.08 1.04 1.00 0.96 0.92 -75 -25 25 75 125 175 V(BR)DSS (norm.) Tj (°C) ID = 2 mA Figure 10. Normalized gate threshold voltage vs temperature GADG110620191140VTH 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -75 -25 25 75 125 175 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 11. Source-drain diode forward characteristics GADG110620191141SDF 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VSD (V) ISD (A) TJ = -55 °C TJ = 25 °C TJ = 175 °C 0.0 STL260N4LF7 Electrical characteristics (curves) DS11156 - Rev 5 page 6/15 |
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