M28F420 datasheet(31/38 Pages) STMICROELECTRONICS

Part #	M28F420

Description	4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

PDF	38 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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31 / 38 page

Write 20h

Command

AI01279

Start

Write Block Address

& 0D0h Command

Read Status

YES

b7=1

YES

b3=0

YES

b4, b5 = 1

End

VPP Low

Error (1)

Command

Sequence Error

EE instruction:

– write 20h command

– write Block Address

(A12-A17) & command 0D0h

(memory enters read status

state after the EE instruction)

do:

– read status register

(E or G must be toggled)

if EE instruction given execute

suspend erase loop

while b7 = 1

If b3 = 0, VPP low error:

– error handler

If b4, b5 = 0, Command Sequence error:

– error handler

YES

b5=0

Erase

Error (1)

YES

Suspend

Loop

If b5 = 0, Erase error:

– error handler

Figure 12. Erase Flow-chart and Pseudo Code

Note: 1. If VPP Low or Erase Error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.

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