SQJ912DEP datasheet(4/9 Pages) VISHAY

4 / 9 page

SQJ912DEP

www.vishay.com

Vishay Siliconix

S20-0575-Rev. A, 03-Aug-2020

Document Number: 77568

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

Note

a. VGS > minimum VGS at which RDS(on) is specified

100

1000

10000

0.5

0.8

1.1

1.4

1.7

2.0

-50

-25

100 125 150 175

Axis Title

J - Junction Temperature (°C)

D = 11.3 A

GS = 10 V

GS = 4.5 V

100

1000

10000

0.007

0.014

0.021

0.028

0.035

02468

Axis Title

GS - Gate-to-Source Voltage (V)

J = 150 °C

J = 25 °C

100

1000

10000

0.01

0.1

100

0.3

0.6

0.9

1.2

1.5

Axis Title

SD - Source-to-Drain Voltage (V)

J = 25 °C

J = 150 °C

100

1000

10000

-1.0

-0.7

-0.4

-0.1

0.2

0.5

-50

-25

100 125 150 175

Axis Title

J - Junction Temperature (°C)

D = 5 mA

D = 250 μA

100

1000

10000

-50

-25

100 125 150 175

Axis Title

J - Junction Temperature (°C)

D = 1 mA

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

DM limited

C = 25 °C,

single pulse

Limited by R

DS(on)

BVDSS limited

10 ms

100 ms, 1 s,

10 s, DC

1 ms

100 μs

D limited

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