SQJ912DEP

www.vishay.com

Vishay Siliconix

S20-0575-Rev. A, 03-Aug-2020

1

Document Number: 77568

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• AEC-Q101 qualified

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited

b. Pulse test; pulse width

 300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

PRODUCT SUMMARY

40

0.0073

0.0102

30

Configuration

Dual

Package

PowerPAK SO-8L

Top View

1

6.15

mm

5.13

mm

1

6.15

m

m

5.13

m

m

Bottom View

2

G

1

3

S

2

4

G

2

1

S

1

N-Channel MOSFET

N-Channel MOSFET

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

40

V

Gate-source voltage

± 20

Continuous drain current

30

A

26

25

120

Single pulse avalanche current

L = 0.1 mH

19

Single pulse avalanche energy

18

mJ

27

W

9

Operating junction and storage temperature range

-55 to +175

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-ambient

85

°C/W

Junction-to-case (drain)

5.5