MCP6V39-ESLASHST datasheet(3/50 Pages) MICROCHIP

3 / 50 page

 2019 Microchip Technology Inc.

DS20006209A-page 3

MCP6V36/6U/7/9

1.0

ELECTRICAL

CHARACTERISTICS

1.1

Absolute Maximum Ratings †

VDD –VSS .................................................................................................................................................................6.5V

Current at Input Pins ..............................................................................................................................................±2 mA

Analog Inputs (VIN+ and VIN–) (Note 1) .....................................................................................VSS – 1.0V to VDD+1.0V

All other Inputs and Outputs .......................................................................................................VSS – 0.3V to VDD+0.3V

Difference Input voltage .................................................................................................................................|VDD –VSS|

Output Short Circuit Current ........................................................................................................................... Continuous

Current at Output and Supply Pins ......................................................................................................................±30 mA

Storage Temperature .............................................................................................................................-65°C to +150°C

Maximum Junction Temperature .......................................................................................................................... +150°C

ESD protection on all pins (HBM, CDM, MM)

  2kV, 1.5kV, 400V

Note 1: See Section 4.2.1, Rail-to-Rail Inputs.

1.2

Specifications

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND,

VCM = VDD/3,VOUT =VDD/2, VL =VDD/2, RL = 100 kΩ to VL and CL = 20 pF (refer to Figure 1-4 and Figure 1-5).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Offset

Input Offset Voltage

VOS

-25

—

+25

µV

TA = +25°C

Input Offset Voltage Drift with

Temperature (Linear Temp. Co.)

TC1

-150

—

+150

nV/°C TA = -40 to +125°C

(Note 1)

Input Offset Voltage Quadratic

Temp. Co.

TC2

—±0.08

—

nV/°C2 TA = -40 to +125°C

Power Supply Rejection Ratio

PSRR

110

135

—

Input Bias Current and Impedance

Input Bias Current

—+5

—

Input Bias Current across Temperature

—+20

—

TA = +85°C

0+2.9

TA = +125°C

Input Offset Current

IOS

—±130

—

Input Offset Current across Temperature

IOS

—±140

—

TA = +85°C

IOS

-1

±0.4

TA = +125°C

Common-Mode Input Impedance

ZCM

—1013||6

—

Ω||pF

Differential Input Impedance

ZDIFF

—1013||6

—

Ω||pF

Note 1:

For Design Guidance only; not tested.

Figure 2-15 shows how VCML and VCMH changed across temperature for the first production lot.

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