IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

IXTH 6N120

IXTT 6N120

Fig. 11. Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

35

40

V

f = 1M hz

Fig. 10. Gate Charge

0

2

4

6

8

10

0

10

2030

4050

60

Q

Fig. 7. Input Admittance

0

1

2

3

4

5

6

3.54

4.55

5.5

6

6.5

V

25ºC

125ºC

Fig. 12. Maximum Transient Thermal

Resistance

0.01

0.1

1

1

10

100

1000

Pulse Width - milliseconds

Fig. 8. Transconductance

0

2

4

6

8

10

12

0

1.5

3

4.5

6

7.5

9

I

25ºC

125ºC

Fig. 9. Source Current vs. Source-To-Drain

Voltage

0

4

8

12

16

20

0.4

0.5

0.6

0.7

0.8

0.9

V