INA821 datasheet(6/47 Pages) TI

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7.5 Electrical Characteristics: G = 1/2 (continued)

at VS = ±2.25 V to ±18 V, TA = 25°C, VCM = VOUT = VS / 2, RL = 10 kΩ connected to ground, and REF pin connected to

ground (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY

Quiescent current

IOUT = 0 mA

TA = 25°C

1.1

1.2

TA = –40°C to +125°C

1.5

(1)

Specified by wafer test to 95% confidence level.

7.6 Electrical Characteristics: G = 2

at VS = ±2.25 V to ±18 V, TA = 25°C, VCM = VOUT = VS / 2, RL = 10 kΩ connected to ground, and REF pin connected to

ground (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFFSET VOLTAGE (RTO)

VOS

Input offset voltage

G = 2, RTO, TA = 25°C, VS = ±2.25 V to ±3

V , VCM = –1.5V

±28

±400

µV

G = 2, RTO, TA = 25°C, VS = ±3 V to ±18

VCM = VS / 2

±28

±400

µV

dVOS/dT Input offset voltage drift

±1.4

±10

µV/°C

PSRR

Power-supply rejection

ratio

VS = ±2.25 V to ±18 V

±1

±5

µV/V

INPUT VOLTAGE

VCM

Common-mode voltage

VOUT = 0 V

3/2[(V–)–

0.1]–0.5VREF

3/2(V+)–

0.5VREF

CMRR

Common-mode rejection

ratio

RTO, 1.5 [(V−) – 0.1 V)]

≤ VCM ≤ 1.5 [(V+) – 3 V)]

TA = 25°C

TA = –40°C to +125°C

RTO, 1.5 [(V+) - 1.5 V)]

≤ VCM ≤ 1.5 [(V+))]

TA = 25°C

TA = –40°C to +125°C

INPUT IMPEDANCE

zid

Differential

VO = 0 V

kΩ

zic

Common-mode

kΩ

GAIN

Initial

V/V

Gain error

VOUT = –10 V to +10 V, VS = ±15 V

±0.01

±0.03

Gain error drift (1)

±0.25

±0.5

ppm/°C

Gain nonlinearity

VOUT = –10 V to +10 V, VS = ±15 V

ppm

OUTPUT

Output voltage swing

Positive rai

130

180

Negative rail

140

180

ISC

Short-circuit current

±65

NOISE

Output voltage noise

f = 0.1 Hz to 10 Hz, RTO

μVpp

Output voltage noise

density

f = 1 kHz, RTO

nV/√Hz

FREQUENCY RESPONSE

GBW

Small signal bandwidth

Amplitude = –3 dB

0.8

MHz

Slew rate

V/µs

Settling time

To 0.1%

VOUT = 10-V step

1.0

µs

To 0.01%

VOUT = 10-V step

1.7

µs

INA597

SBOS385B – AUGUST 2019 – REVISED APRIL 2021

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