ACE1H004B

40V Complementary Enhancement Mode MOSFET

VER 1.2

3

N-Channel Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

40

V

Zero Gate Voltage Drain Current

I

DSS

V

1

μA

Gate Threshold Voltage

V

GS(TH)

V

1

1.7

3

V

Gate Leakage Current

I

GSS

±100

nA

Drain-Source On-state

Resistance

R

DS(on)

V

15

20

mΩ

V

18.6

24

Diode Forward Voltage

V

SD

0.7

1.2

V

Diode Forward Current*AB

2.8

A

Switching

Total Gate Charge

Q

g

20.5

nC

Gate-Source Charge

Q

gs

3.5

Gate-Drain Charge

Q

gd

4

Turn-on Delay Time

t

d ( on )

Ω

14

ns

Turn-on Rise Time

10

Turn-off Delay Time

t

d( off )

17

Turn-Off Fall Time

18

Reverse Recovery Time

/dt = 100 A/μs

8

ns

Reverse Recovery Charge

3

nC

Dynamic

Input Capacitance

f=1.0MHz

1050

pF

Output Capacitance

155

Reverse Transfer Capacitance

95

B

: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.