QPA2210DEVB01 datasheet(2/22 Pages) QORVO

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QPA2210D

27 – 31 GHz 7 Watt GaN Power Amplifier

Data Sheet Rev. C, January 2021 | Subject to change without notice

2 of 22

www.qorvo.com

Absolute Maximum Ratings

Parameter

Value / Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

−5 V to 0 V

Drain Current (ID)

2800 mA

Gate Current (IG)

See plot pg. 17

Power Dissipation (PDISS), 85 °C

20 W

Input Power (PIN

), 50 Ω,

VD=20 V, IDQ=200 mA, 85 °C

33 dBm

Input Power (PIN), 3:1 VSWR,

VD=20 V, IDQ=200 mA, 85 °C

33 dBm

Soldering Temperature (30 s, max.)

320 °C

Storage Temperature

−55 to +150 °C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

Recommended Operating Conditions

Parameter

Value / Range

Drain Voltage (VD)

20 V

Drain Current (IDQ)

200 mA

Operating Temperature

−40 to +85 °C

Electrical

specifications

are

measured

specified

test

conditions.

Specifications

are

not

guaranteed

over

all

recommended operating conditions.

Electrical Specifications

Parameter

Min

Typ

Max

Units

Operational Frequency

GHz

Output Power (PIN=21 dBm)

27 GHz

29 GHz

31 GHz

38.8

39.0

38.8

dBm

Power Added Efficiency (PIN=21 dBm)

27 GHz

29 GHz

31 GHz

34.7

33.7

33.9

Small Signal Gain

27 GHz

29 GHz

31 GHz

27.0

27.3

26.0

Input Return Loss

27 GHz

29 GHz

31 GHz

Output Return Loss

27 GHz

29 GHz

31 GHz

IMD3 (POUT/Tone=31 dBm, 10 MHz tone

spacing)

27 GHz

29 GHz

31 GHz

−34

−29

dBc

POUT

Temp. Coeff. (85 °C to 25 °C, PIN = 21 dBm))

−0.020

dB/°C

Sm. Sig. Gain Temp. Coefficient (85 °C to −40 °C)

−0.094

dB/°C

Test conditions, unless otherwise noted: T = +25 °C, VD = 20 V, IDQ = 200 mA

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